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PDF VS-25MT060WFAPbF Data sheet ( Hoja de datos )
| Número de pieza | VS-25MT060WFAPbF | |
| Descripción | IGBT MTP | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-25MT060WFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP (Warp Speed IGBT), 50 A
MTP
PRODUCT SUMMARY
VCES
IC DC
VCE(on)
Package
Circuit
600 V
69 A
2.22 V
MTP
Full bridge
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMT thermistor
• Al2O3 DBC
• Very low stray inductance design for high speed operation
• Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz
resonant mode
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
per single IGBT
ICM
ILM
IF
IFM
VGE
VISOL
PD
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 100 °C
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 100 °C
MAX.
600
69
46
200
200
25
200
± 20
2500
195
78
UNITS
V
A
V
W
Revision: 30-Oct-13
1 Document Number: 94539
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
2.0
RG = 5.0Ω
TJ = 25°C
VGE = 15V
1.5 VCC = 480V
EOFF
1.0
0.5 EON
0.0
0
10 20 30 40 50 60
IC, Collector Current (A)
Fig. 9 - Typical Switching Losses vs.
Collector to Emitter Current
1000
VGE = 20V
TJ = 125°
100
10
SAFE OPERATING AREA
1
1
10 100 1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 10 - Turn-Off SOA
100
10 TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - VF (V)
Fig. 11 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
VS-25MT060WFAPbF
Vishay Semiconductors
140
120
VR = 200V
TJ = 125°C
TJ = 25°C
100
80 IF = 50A
IF = 25A
IF = 10A
60
40
20
100
di f /dt - (A/μs)
1000
Fig. 12 - Typical Reverse Recovery Time vs. dIF/dt
30
VR = 200V
TJ = 125°C
TJ = 25°C
25
I F = 50A
20
I F = 25A
I F = 10A
15
10
5
0
100
di f /dt - (A/μs)
A
1000
Fig. 13 - Typical Reverse Recovery Current vs. dIF/dt
1400
1200
VR = 200V
TJ = 125°C
TJ = 25°C
1000
800
600
I F = 50A
I F = 25A
IF = 10A
400
200
0
100
di f /dt - (A/μs)
1000
Fig. 14 - Typical Stored Charge vs. dIF/dt
Revision: 30-Oct-13
5 Document Number: 94539
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-25MT060WFAPbF.PDF ] | |
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