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PDF VS-GB75YF120UT Data sheet ( Hoja de datos )
| Número de pieza | VS-GB75YF120UT | |
| Descripción | IGBT Fourpack Module | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VS-GB75YF120UT
Vishay Semiconductors
IGBT Fourpack Module, 75 A
ECONO2 4PACK
PRODUCT SUMMARY
VCES
IC at TC = 67 °C
VCE(on) (typical)
Package
Circuit
1200 V
75 A
3.4 V
ECONO2
4 PACK with thermistor
FEATURES
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Copper baseplate
• Low stray inductance design
• Speed 8 kHz to 60 kHz
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Diode maximum forward current
Gate to emitter voltage
IFM
VGE
Maximum power dissipation (IGBT)
PD
Maximum operating junction temperature
Storage temperature range
Isolation voltage
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
1200
100
67
200
200
60
40
150
± 20
480
270
150
-40 to +125
AC 2500 (min)
UNITS
V
A
V
W
°C
V
Revision: 17-Apr-14
1 Document Number: 93172
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
1
TJ = 125°C
0.1
0.01
TJ = 25°C
0.001
400
600
800
1000
1200
VCES (V)
Fig. 11 - Typical Zero Gate Voltage Collector Current
5.5
5
TJ = 25°C
4.5
4
3.5 TJ = 125°C
3
2.5
2
0 0.2 0.4 0.6 0.8 1
IC (mA)
Fig. 12 - Typical Threshold Voltage
2500
VS-GB75YF120UT
Vishay Semiconductors
1000
100
tdOFF
tF
tR
tdON
10
20 30 40 50 60 70 80
IC (A)
Fig. 14 - Typical Switching Time vs. IC
TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 Ω; VGE = 15 V
14000
12000
10000
8000
6000
4000
EON
EOFF
2000
0
0 10 20 30 40 50
RG (Ω)
Fig. 15 - Typical Energy Loss vs. Rg
TJ = 125 °C; L = 500 μH; VCC = 600 V, IC = 75 A; VGE = 15 V
10000
2000
1500
EON
EOFF
1000
100
tdOFF
tF
tR
tdON
1000
30 40 50 60 70 80
IC (A)
Fig. 13 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 Ω; VGE = 15 V
10
0
10 20 30 40 50
RG (Ω)
Fig. 16 - Typical Switching Time vs. Rg
TJ = 125 °C; L = 500 μH; VCC = 600 V, IC = 75 A; VGE = 15 V
Revision: 17-Apr-14
5 Document Number: 93172
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet VS-GB75YF120UT.PDF ] | |
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