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PDF VS-ETL015Y120H Data sheet ( Hoja de datos )
| Número de pieza | VS-ETL015Y120H | |
| Descripción | EMIPAK-2B PressFit Power Module | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-ETL015Y120H
Vishay Semiconductors
EMIPAK-2B PressFit Power Module
Double Interleaved Boost Converter, 15 A
EMIPAK-2B
(package example)
PRODUCT SUMMARY
RECTIFIER BYPASS DIODE
VRRM
VFM typical at IF = 20 A
IF at TC = 80 °C
PFC IGBT
1200 V
1.04 V
62 A
VCES
VCE(ON) typical at IC = 15 A
IC at TC = 80 °C
Package
1200 V
2.61 V
15 A
EMIPAK-2B
Circuit
Double interleaved boost converter
FEATURES
• Trench IGBT technology
• HEXFRED clamping diode technology
• Rectifier bypass diode
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal resistance
• Integrated thermistor
• 10 μs short circuit capability
• Square RBSOA
• Operating frequency up to 20 kHz
• Low internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ETL015Y120H is an integrated solution for a double
interleaved boost converter. The EMIPAK-2B package is
easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Operating junction temperature
Storage temperature range
RMS isolation voltage
DbpA - DbpB BYPASS DIODE
TJ
TStg
VISOL
Repetitive peak reverse voltage
VRRM
Continuous output current
IF
Surge current (non- repetitive)
Power dissipation
Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
IFSM
PD
VCES
VGES
ICM
ILM (1)
Continuous collector current
IC
Power dissipation
PD
TEST CONDITIONS
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
Rated VRRM applied
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TSINK = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
150
-40 to 150
3500
1200
94
62
39
250
167
93
1200
20
40
40
22
15
11
89
50
UNITS
°C
V
V
A
W
V
A
A
W
Revision: 27-Jun-14
1 Document Number: 94858
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
160
140
120
DC
100
80
60
40
20
0
0 5 10 15 20 25
IC - Continuous Collector Current (A)
Fig. 5 - Maximum Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Continuous Collector Current vs. Case Temperature
VS-ETL015Y120H
Vishay Semiconductors
10
1 TJ = 150 °C
0.1
0.01
TJ = 125 °C
0.001
0.0001
TJ = 25 °C
0.00001
100 200 300 400 500 600 700 800 900 1000 1100 1200
VCES (V)
Fig. 8 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Zero Gate Voltage Collector Current
30
VCE = 20 V
25
20
15
10 TJ = 125 °C
5 TJ = 25 °C
0
5 6 7 8 9 10 11 12 13 14
VGE (V)
Fig. 6 - Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT
Transfer Characteristics
6.5
TJ = 125 °C
6
5.5
5
4.5 TJ = 25 °C
4
3.5
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
IC (A)
Fig. 7 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. IC
(with D5 - D6 Clamping Diode)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
2
1.8
1.6
1.4
1.2 Eon
1
0.8 Eoff
0.6
0.4
0.2
0
0 5 10 15 20 25 30
IC (A)
Fig. 9 - Typical PFC IGBT Energy Loss vs. IC
(with Freewheeling Clamping Diode)
TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
1000
tdoff
100
tf
10 tdon
tr
1
0 5 10 15 20 25 30
IC (A)
Fig. 10 - Typical PFC IGBT Switching Time vs. IC
(with Freewheeling Clamping Diode)
TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Revision: 27-Jun-14
5 Document Number: 94858
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
DIMENSIONS in millimeters
EMIPAK-2B PressFit
Outline Dimensions
Vishay Semiconductors
Ø 4.4 ± 0.1
56.8 ± 0.3
52.7 ± 0.5
51 ± 0.15
20.4
16.6
Pin position
0.4
1.6
4.8
8
11.2
14.4
17.6
20.8
24
8
11.2
14.4
17.6
20.8
24
1.6
4.8
Revision: 25-Jun-14
1 Document Number: 95559
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
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| PDF Descargar | [ Datasheet VS-ETL015Y120H.PDF ] | |
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