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UPC2708T fiches techniques PDF

NEC - 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

Numéro de référence UPC2708T
Description 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER
Fabricant NEC 
Logo NEC 





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UPC2708T fiche technique
3 GHz SILICON MMIC UPC2708T
WIDE-BAND AMPLIFIER UPC2711T
FEATURES
• WIDE FREQUENCY RESPONSE: 3 GHz
• HIGH GAIN: 15 dB (UPC2708T)
• SATURATED OUTPUT POWER: +10 dBm (UPC2708T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2708T and UPC2711T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
GAIN vs. FREQUENCY
20
15 UPC2708
UPC2711
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 1 GHz, VCC = 5 V)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
ICC
GS
fU
GS
PSAT
P1dB
NF
RLIN
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 - 2.6 GHz
f = 0.1 - 2.5 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
mA
dB
GHz
dB
dBm
dBm
dB
dB
RLOUT
ISOL
GT
RTH
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
dB
dB
dB/°C
°C/W
UPC2708T
T06
MIN TYP MAX
20 26 33
13 15 18.5
2.7 2.9
±0.8
7.5 10
7.5
6.5 8
8 11
16 20
18 23
+0.002
200
UPC2711T
T06
MIN TYP MAX
9 12 15
11 13 16.5
2.7 2.9
±0.8
-2 1
-4
5 6.5
20 25
9 12
25 30
-0.002
200
California Eastern Laboratories

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