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RLT785-100MGS fiches techniques PDF

Roithner - Infrared Laser Diode

Numéro de référence RLT785-100MGS
Description Infrared Laser Diode
Fabricant Roithner 
Logo Roithner 





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RLT785-100MGS fiche technique
RLT785-100MGS
v 1.1 29.01.2015
Description
RLT785-100MGS is a single mode Laser Diode emitting at typical 785 nm with rated output power of
100 mW CW at room temperature. The 5.6 mm TO package includes a cap and flat window, and contains
a built-in monitor PD.
Maximum Ratings (TCASE=25°C)
Parameter
Symbol
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Lead Solder Temperature *2
*1 must be completed within 5 seconds
IF
VF
TCASE
TSTG
TSLD
Min.
- 10
- 40
Electro-Optical Characteristics (TCASE=25°C)
Values
Max.
2.0
+ 70
+ 85
+ 280
Unit
mA
V
°C
°C
°C
Parameter
Peak Wavelength
Half Width
Optical Output Power (CW Mode)
Optical Output Power (Pulse Mode ) *1
Laser Beam Mode
Threshold Current
Forward Current
Forward Voltage
Slope Efficiency
Beam Divergence
Beam Divergence
Monitor Current
PD Reverse Voltage
*1 duty=50%, pulse width = 0.5 µs
Symbol
λP
∆λ
PO
PO
ITH
IOP
VOP
η
ӨII
Ө┴
IM
VPDR
Min.
775
7
15
Values
Typ.
785
2.0
100
220
Single Mode
35
140
2.0
1.1
9
17
0.5
30
Max.
795
55
160
2.5
1.3
10
19
0.8
Unit
nm
nm
mW
mW
mA
mA
V
mW/mA
°
°
mA
V
www.roithner-laser.com
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