DataSheetWiki


RLCO-808-500G fiches techniques PDF

Roithner - High Power Infrared Laser Diode

Numéro de référence RLCO-808-500G
Description High Power Infrared Laser Diode
Fabricant Roithner 
Logo Roithner 





1 Page

No Preview Available !





RLCO-808-500G fiche technique
RLCO-808-500G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
Lasing Mode Structure: multi mode
Peak Wavelength : typ. 808 nm
Optical Output Power: 500 mW
Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (TC=20°C)
Item
CW Output Power
Operating Case Temperature
Storage Temperature
Symbol
PO
TC
Tstg
Value
500
-10 … +50
-40 … +85
Unit
W
°C
°C
Specifications (TC=20°C)
Item
Optical Specifications
CW Output Power
Center Wavelength
Spectral Width (FWHM)
Wavelength Temperature Coefficient
FWHM Beam Divergence
Polarization
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Series Resitance
Symbol
PO
λC
Δλ
∂λ / ∂T
θ
θ
Ith
Iop
η
Vop
Rd
Min.
-
803
-
-
-
-
-
-
1
-
-
Typ.
500
808
2
0.3
6
32
TE
0.15
1.1
-
1.8
-
Max.
-
813
5
-
12
40
0.26
1.2
-
2.2
0.3
Unit
W
nm
nm
nm/°C
deg
deg
A
A
W/A
V
Ω
The above specifications are for reference purpose only and subjected to change without prior notice.
10.04.2013
RLCO-808-500G
1 of 3

PagesPages 3
Télécharger [ RLCO-808-500G ]


Fiche technique recommandé

No Description détaillée Fabricant
RLCO-808-5000-TO3 High Power Infrared Laser Diode Roithner
Roithner
RLCO-808-500G High Power Infrared Laser Diode Roithner
Roithner

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche