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PDF G30N60HS Data sheet ( Hoja de datos )
| Número de pieza | G30N60HS | |
| Descripción | High Speed IGBT | |
| Fabricantes | Infineon | |
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SGP30N60HS
SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
PG-TO-220-3-1
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE IC Eoff) Tj Marking
Package
SGP30N60HS
600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1
SGW30N60HS
600V
30 480µJ 150°C G30N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25Ω
start TJ=25°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
EAS
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
41
30
112
112
165
±20
±30
10
250
-55...+150
175
260
Unit
V
A
mJ
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov 09
1 page  
SGP30N60HS
SGW30N60HS
80A
70A
60A
50A
VGE=20V
15V
13V
11V
9V
7V
5V
40A
30A
20A
10A
0A 0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
80A
VGE=20V
15V
70A
13V
11V
60A
9V
7V
50A 5V
40A
30A
20A
10A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
80A
60A
TJ=-55°C
25°C
150°C
40A
20A
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
5,5V
5,0V
4,5V
IC=60A
4,0V
3,5V
3,0V
IC=30A
2,5V
2,0V
IC=15A
1,5V
1,0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.4 Nov 09
5 Page 
SGP30N60HS
SGW30N60HS
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
a nd Stray capacity Cσ =40pF.
Power Semiconductors
11
Rev. 2.4 Nov 09
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet G30N60HS.PDF ] | |
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