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Roithner - Infrared Laser diode

Numéro de référence S8550MG
Description Infrared Laser diode
Fabricant Roithner 
Logo Roithner 





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S8550MG fiche technique
S8550MG
TECHNICAL DATA
Infrared Laser Diode
Features
Lasing Mode Structure: multi mode
Peak Wavelength : typ. 850 nm
Optical Ouput Power: 50 mW
Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (TC=25°C)
Item
CW Output Power
LD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
PO
VrLD
TC
Tstg
Value
50
2
-10 … +50
-40 … +85
Unit
mW
V
°C
°C
Specifications (TC=25°C, PO=50mW)
Item
Symbol
Min.
Optical Specifications
Center Wavelength
FWHM Beam Divergence*
Electrical Specifications
λC 830
θ-
θ-
Threshold Current
Operating Current
Slope Efficiency
Ith -
Iop -
η-
Operating Voltage
Monitor Current
Uop -
Im 0.05
* θand θare defined as the angle within the intensity is 50% of the peak value.
Typ.
850
11
18
16
68
0.95
2.1
0.13
Max.
860
16
23
20
85
-
2.3
0.50
Unit
nm
deg
deg
mA
mA
mW/mA
V
mA
The above specifications are for reference purpose only and subjected to change without prior notice.
19.11.2013
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