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PDF K2983 Data sheet ( Hoja de datos )

Número de pieza K2983
Descripción MOSFET ( Transistor ) - 2SK2983
Fabricantes NEC 
Logotipo NEC Logotipo

K2983 datasheet


1. N-Channel Power MOSFET - NEC






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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2983
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
Low on-resistance
RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
Low Ciss Ciss = 1200 pF TYP.
Built-in gate protection diode
ORDERING INFOMATION
PART NUMBER
2SK2983
2SK2983-S
2SK2983-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source VoltageNote1
Gate to Source VoltageNote2
VDSS
VGSS
30
±20
Drain Current (DC)
Drain Current (pulse)Note3
ID(DC)
ID(pulse)
±30
±120
Total Power Dissipation (TA = 25°C)
PT
1.5
Total Power Dissipation (TC = 25°C)
PT
50
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to +150
V
V
A
A
W
W
°C
°C
Notes1. VGS = 0 V
2. VDS = 0 V
3. PW 10 µ s, Duty Cycle 1 %
.
The information in this document is subject to change without notice.
Document No. D12357EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP (K)
Printed in Japan
©
1998

1 page




K2983 pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30 VGS = 4.5 V
10 V
20
10
0 ID = 15 A
- 50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
0.1 1 10 100
IF - Diode Current - A
2SK2983
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Pulsed
100
10 VGS = 0 V
1
0.1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
td(on)
10
1
0.1
VDD = 15 V
VGS = 10 V
RG = 10
1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 30 A
14
30
VDD = 24 V
20
15 V
6V
12
VGS 10
8
6
10 4
VDS 2
0 10 20 30 40
QG - Gate Charge - nC
5

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