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15SQ080 fiches techniques PDF

Naina Semiconductor - Schottky Barrier Rectifier ( Diode )

Numéro de référence 15SQ080
Description Schottky Barrier Rectifier ( Diode )
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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15SQ080 fiche technique
Naina Semiconductor Ltd.
15SQ030 thru
15SQ100
Schottky Barrier Rectifier, 15.0 A
Features
Diffused junction
Low cost
Low reverse leakage current
High surge current capability & low forward voltage drop
Polarity: Color Band denotes Cathode
High efficiency
Mechanical Data
Case: JEDEC R-6 molded plastic
Polarity: Color band denotes cathode
Weight: 2.1 grams
Mounting position: Any
Thermal Specifications (TC = 25oC unless otherwise specified)
Parameters
Symbol Values
Maximum operating junction temperature range TJ -55 to +200
Maximum storage temperature range
TSTG -55 to +200
Typical thermal resistance junction to case
RθJC 3.5
Units
oC
oC
oC/W
JEDEC R-6
Electrical Characteristics (TC = 25oC unless otherwise specified)
Parameter
Symbol 15SQ030 15SQ035 15SQ040
Maximum repetitive peak
reverse voltage
VRRM
30
35
40
Maximum RMS voltage
VRMS
21
24.5
28
Maximum DC blocking
voltage
VDC 30
35
40
Maximum average
forward output current @
TC = 950C
Peak forward surge
current (8.3ms) single half
sine-wave superimposed
on rated load
IF(AV)
IFSM
Forward voltage drop @
15A DC (Note 1)
VF
0.55
Typical junction
capacitance (Note 2)
CJ
Maximum DC
reverse current
at rated DC
blocking voltage
TA =
250C
TA =
1000C
IR
NOTES:
(1) 300 µs, pulse width, 2% duty cycle
(2) Measured at 1.0 MHz and reverse voltage of 4.0 VDC.
15SQ045 15SQ050 15SQ060
45 50 60
31.5 35
42
45 50 60
15
275
0.7
450
0.5
50
15SQ080 15SQ100
80 100
56 70
80 100
0.8
Units
V
V
V
A
A
V
pF
mA
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com

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