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NTD106B fiches techniques PDF

Naina Semiconductor - Thyristor/Diode Module

Numéro de référence NTD106B
Description Thyristor/Diode Module
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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NTD106B fiche technique
Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type
number
Voltage
Code
VRRM, Maximum
repetitive peak
reverse voltage
VRSM, Maximum non-
repetitive peak reverse
voltage
NTD106B
20
40
60
80
100
120
160
(V)
200
400
600
800
1000
1200
1600
(V)
300
500
700
900
1100
1300
1700
VDRM, Maximum
repetitive peak off-
state voltage
(V)
200
400
600
800
1000
1200
1600
IRRM, Maximum
reverse leakage
current @ TJMAX
(mA)
10
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average forward current @ TJ = 850C
Maximum average RMS forward current
Symbol
IT(AV)
IT(RMS)
Maximum non-repetitive surge current
Maximum I2t for fusing
ITSM
I2t
Forward voltage drop
Critical rate of rise of on-state current
VTM
di/dt
Critical rate of rise of off-state voltage
dv/dt
Gate current required to trigger
Gate voltage required to trigger
Maximum holding current
Maximum latching current
Isolation voltage
IGT
VGT
IH
IL
VISO
Values
106
166
2250
25300
1.3
150
1000
150
3
200
400
3000
Units
A
A
A
A2s
V
A/µs
V/µs
mA
V
mA
mA
V
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Storage temperature
TJ
Tstg
Thermal resistance, junction to case
Mounting torque
to heatsink
to terminals
Rth(JC)
F
Weight
W
Values
-40 to +125
-40 to +125
0.4
4 ± 15%
3 ± 15%
100
Units
0C
0C
0C/W
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com

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