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PDF MUR10010CT Data sheet ( Hoja de datos )
| Número de pieza | MUR10010CT | |
| Descripción | Super Fast Recovery Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
MUR10005CT thru
MUR10020CTR
Features
Super Fast Recovery Diode, 100A
• Dual Diode Construction
• Low Leakage Current
• Low forward voltage drop
• High surge current capability
• Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR10005CT(R)
Repetitive peak reverse
voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
Average forward current
Non-repetitive forward surge
current, half sine-wave
VDC
IF(AV)
IFSM
TC ≤ 140 oC
TC = 25 oC
50
100
400
MUR10010CT(R)
100
70
100
100
400
MUR10020CT(R)
200
140
200
100
400
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR10005CT(R)
DC forward voltage
VF
IF = 50 A
TJ = 25 oC
1.3
DC reverse current
VR = 50 V
IR
TJ = 25 oC
VR = 50 V
TJ = 125oC
25
1
Maximum Reverse Recovery
Time
IF = 0.5A
trr IR = 1.0A
IRR = 0.25A
75
MUR10010CT(R)
1.3
25
1
75
MUR10020CT(R)
1.3
25
1
75
Units
V
µA
mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MUR10005CT(R)
Thermal resistance
junction to case
RthJ-C
1.0
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MUR10010CT(R)
1.0
- 40 to +175
MUR10020CT(R)
1.0
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MUR10010CT.PDF ] | |
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