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Naina Semiconductor - Super Fast Recovery Diode

Numéro de référence MUR20005CTR
Description Super Fast Recovery Diode
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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MUR20005CTR fiche technique
Naina Semiconductor Ltd.
MUR20005CT thru
MUR20020CTR
Features
Super Fast Recovery Diode, 200A
Dual Diode Construction
Low Leakage Current
Low forward voltage drop
High surge current capability
Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR20005CT(R)
Repetitive peak reverse
voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
Average forward current
Non-repetitive forward surge
current, half sine-wave
VDC
IF(AV)
IFSM
TC ≤ 140 oC
TC = 25 oC
50
200
800
MUR20010CT(R)
100
70
100
200
800
MUR20020CT(R)
200
140
200
200
800
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR20005CT(R)
DC forward voltage
VF
IF = 50 A
TJ = 25 oC
1.3
DC reverse current
VR = 50 V
IR
TJ = 25 oC
VR = 50 V
TJ = 125oC
25
1
Maximum Reverse Recovery
Time
IF = 0.5A
trr IR = 1.0A
IRR = 0.25A
75
MUR20010CT(R)
1.3
25
1
75
MUR20020CT(R)
1.3
25
1
75
Units
V
µA
mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MUR20005CT(R)
Thermal resistance
junction to case
RthJ-C
1.0
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MUR20010CT(R)
1.0
- 40 to +175
MUR20020CT(R)
1.0
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com

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