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PDF MUR20040CT Data sheet ( Hoja de datos )
| Número de pieza | MUR20040CT | |
| Descripción | Super Fast Recovery Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
MUR20040CT thru
MUR20060CTR
Features
Super Fast Recovery Diode, 200A
• Dual Diode Construction
• Low Leakage Current
• Low forward voltage drop
• High surge current capability
• Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
VDC
Average forward current
IF(AV)
Non-repetitive forward surge current, half sine-
wave
IFSM
Conditions
TC ≤ 140 oC
TC = 25 oC
MUR20040CT(R)
400
280
400
200
800
MUR20060CT(R)
600
420
600
200
800
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions
DC forward voltage
VF
IF = 50 A
TJ = 25 oC
DC reverse current
VR = 50 V
IR
TJ = 25 oC
VR = 50 V
TJ = 125oC
Maximum Reverse Recovery Time
IF = 0.5A
trr IR = 1.0A
IRR = 0.25A
MUR20040CT(R)
1.3
25
1
90
MUR20060CT(R)
1.7
25
1
110
Units
V
µA
mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Thermal resistance
junction to case
RthJ-C
Operating, storage temperature range
TJ , Tstg
MUR20040CT(R) MUR20060CT(R) Units
1.0 1.0 oC/W
- 40 to +175
- 40 to +175
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MUR20040CT.PDF ] | |
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