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MUR20060CTR fiches techniques PDF

Naina Semiconductor - Super Fast Recovery Diode

Numéro de référence MUR20060CTR
Description Super Fast Recovery Diode
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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MUR20060CTR fiche technique
Naina Semiconductor Ltd.
MUR20040CT thru
MUR20060CTR
Features
Super Fast Recovery Diode, 200A
Dual Diode Construction
Low Leakage Current
Low forward voltage drop
High surge current capability
Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
VDC
Average forward current
IF(AV)
Non-repetitive forward surge current, half sine-
wave
IFSM
Conditions
TC ≤ 140 oC
TC = 25 oC
MUR20040CT(R)
400
280
400
200
800
MUR20060CT(R)
600
420
600
200
800
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions
DC forward voltage
VF
IF = 50 A
TJ = 25 oC
DC reverse current
VR = 50 V
IR
TJ = 25 oC
VR = 50 V
TJ = 125oC
Maximum Reverse Recovery Time
IF = 0.5A
trr IR = 1.0A
IRR = 0.25A
MUR20040CT(R)
1.3
25
1
90
MUR20060CT(R)
1.7
25
1
110
Units
V
µA
mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Thermal resistance
junction to case
RthJ-C
Operating, storage temperature range
TJ , Tstg
MUR20040CT(R) MUR20060CT(R) Units
1.0 1.0 oC/W
- 40 to +175
- 40 to +175
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com

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