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MUR30020CTR fiches techniques PDF

Naina Semiconductor - Super Fast Recovery Diode

Numéro de référence MUR30020CTR
Description Super Fast Recovery Diode
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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MUR30020CTR fiche technique
Naina Semiconductor Ltd.
MUR30005CT thru
MUR30020CTR
Features
Super Fast Recovery Diode, 300A
Dual Diode Construction
Low Leakage Current
Low forward voltage drop
High surge current capability
Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR30005CT(R)
Repetitive peak reverse
voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
Average forward current
Non-repetitive forward surge
current, half sine-wave
VDC
IF(AV)
IFSM
TC ≤ 140 oC
TC = 25 oC
50
300
1500
MUR30010CT(R)
100
70
100
300
1500
MUR30020CT(R)
200
140
200
300
1500
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR30005CT(R)
DC forward voltage
VF
IF = 50 A
TJ = 25 oC
1.3
DC reverse current
VR = 50 V
IR
TJ = 25 oC
VR = 50 V
TJ = 125oC
25
1
Maximum Reverse Recovery
Time
IF = 0.5A
trr IR = 1.0A
IRR = 0.25A
90
MUR30010CT(R)
1.3
25
1
90
MUR30020CT(R)
1.3
25
1
90
Units
V
µA
mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MUR30005CT(R)
Thermal resistance
junction to case
RthJ-C
1.0
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MUR30010CT(R)
1.0
- 40 to +175
MUR30020CT(R)
1.0
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com

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