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TPH3R203NL fiches techniques PDF

Toshiba - Silicon N-channel MOSFET

Numéro de référence TPH3R203NL
Description Silicon N-channel MOSFET
Fabricant Toshiba 
Logo Toshiba 





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TPH3R203NL fiche technique
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH3R203NL
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 5.2 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 3.8 m(typ.) (VGS = 4.5 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
TPH3R203NL
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
84 A
Drain current (DC)
(Tc = 25 )
(Note 1)
ID
47
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
200
Power dissipation
(Tc = 25 )
PD 44 W
Power dissipation
(t = 10 s)
(Note 3)
PD
2.8
Power dissipation
(t = 10 s)
(Note 4)
PD
1.6
Single-pulse avalanche energy
(Note 5)
EAS
94 mJ
Avalanche current
IAR 47 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2013-08-26
Rev.1.0

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