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PDF MT3205A Data sheet ( Hoja de datos )
| Número de pieza | MT3205A | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | MOS-TECH | |
| Logotipo |  |
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MOS-TECH Semiconductor Co.,LTD
MT3205A
N-Channel Power MOSFET
V, 10A, .mΩ
Features
• RDS(on) = 3.6mΩ ( Typ.)@ VGS = 10V, ID = 100A
• High performance trench technology for extermly low RDS(on)
• High power and current handing capability
• RoHS compliant
Description
• This N-Channel MOSFET is produced using MOS-TECH
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
D
GDS
TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
S
Ratings
60
±20
120
470
397
250
1.0
-55 to +175
Ratings
0.65
35
Units
V
V
A
A
mJ
W
W/oC
oC
Units
oC/W
©2011 MOS-TECH Semiconductor Corporation
MT3205A Rev. B
1
www.mtsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
MT3205A Rev. B
5 www.mtsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MT3205A.PDF ] | |
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