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PDF SUP90N03-03 Data sheet ( Hoja de datos )
| Número de pieza | SUP90N03-03 | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 30-V (D-S) MOSFET
SUP90N03-03
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0029 at VGS = 10 V
0.0033 at VGS = 4.5 V
TO-220AB
ID (A)a, e
90
90
Qg (Typ)
82 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
• Server
• DC/DC
D
DRAIN connected to TAB
G
GDS
Top View
Ordering Information: SUP90N03-03-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
90a, e
90e
28.8b, c
27b, c
90
36
64.8
90a, e
3.13b, c
250a
175
3.75b, c
2.63b, c
- 55 to 175
Unit
V
A
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case
t 10 sec
Steady State
RthJA
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Typ.
32
0.5
Max.
40
0.6
Unit
°C/W
Document Number: 74341
For more information please contact: [email protected]
www.vishay.com
S12-0683-Rev. B, 26-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
SUP90N03-03
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
300 300
250 250
200 200
150
Package Limited
100
150
100
50 50
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power Derating
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74341
Document Number: 74341
For more information please contact: [email protected]
www.vishay.com
S12-0683-Rev. B, 26-Mar-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUP90N03-03.PDF ] | |
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