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PDF SUP90N04-3m3P Data sheet ( Hoja de datos )
| Número de pieza | SUP90N04-3m3P | |
| Descripción | N-Channel 40V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SUP90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0033 at VGS = 10 V
0.0041 at VGS = 4.5 V
ID (A)d
90
90
Qg (Typ.)
87
TO-220AB
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
D
GDS
Top View
Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 20
90d
90d
160
60
180
125b
3.1
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 65902
S10-0632-Rev. A, 22-Mar-10
Symbol
RthJA
RthJC
Limit
40
1
Unit
°C/W
www.vishay.com
1
1 page  
SUP90N04-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
1000
Limited by RDS(on)*
100
TJ = 25 °C
10
TJ = 150 °C
1
0.00001
0.0001
0.001
Time (s)
0.01
0.1
Single Pulse Avalanche Current Capability vs. Time
1
100 μs
10 1 ms
10 ms
100 ms, 1 s
1 10 s, DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65902.
Document Number: 65902
S10-0632-Rev. A, 22-Mar-10
www.vishay.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SUP90N04-3m3P.PDF ] | |
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