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PDF SUP90N06-05L Data sheet ( Hoja de datos )
| Número de pieza | SUP90N06-05L | |
| Descripción | N-Channel 60-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
SUP90N06-05L
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.0049 @ VGS = 10 V
0.0055 @ VGS = 4.5 V
TO-220AB
ID (A)
90 a
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
APPLICATIONS
D Automotive Such As
− High-Side Switch
− Motor Drives
− 12-V Battery
D Synchronous Rectification
D
DRAIN connected to TAB
G
GD S
Top View
Ordering Information: SUP90N06-05L—E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
ID
IDM
IAS
EAS
PD
TJ, Tstg
90a
90a
240
75
280
300b
−55 to 175
THERMAL RESISTANCE RATINGS
Junction-to-Ambient (Free Air)
Junction-to-Case
Parameter
Notes
a. Package limited.
b. See SOA curve for voltage derating.
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
Symbol
RthJA
RthJC
Limit
62.5
0.5
Unit
V
A
mJ
W
_C
Unit
_C/W
www.vishay.com
1
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New Product
SUP90N06-05L
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs. Case Temperature
200
160
120
80
Limited
40 by Package
0
0 25 50 75 100 125 150 175
TC − Case Temperature (_C)
1000
100
10
1
0.1
0.1
Safe Operating Area
Limited
by rDS(on)
TC = 25_C
Single Pulse
1 10
VDS − Drain-to-Source Voltage (V)
10 ms
100 ms
1 ms
10 ms, 100 ms,
dc
100
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Normalized Thermal Transient Impedance, Junction-to-Case
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
www.vishay.com
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