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APT50GS60BRDQ2G fiches techniques PDF

Microsemi - High Speed NPT IGBT

Numéro de référence APT50GS60BRDQ2G
Description High Speed NPT IGBT
Fabricant Microsemi 
Logo Microsemi 





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APT50GS60BRDQ2G fiche technique
APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
600V, 50A, VCE(ON) = 2.8V Typical
Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode
The Thunderbolt HSseries is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt® series, but trades higher VCE(ON) for signicantly lower turn-on energy Eoff. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefcient
make it easy to parallel Thunderbolts HSIGBT's. Controlled slew rates result in very good noise
TO-247
D3PAK
and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
Features
Typical Applications
APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
• Fast Switching with low EMI
• Very Low EOFF for Maximum Efciency
• Short circuit rated
• Low Gate Charge
• ZVS Phase Shifted and other Full Bridge
• Half Bridge
• High Power PFC Boost
• Welding
Single die
IGBT with
separate DQ
diode die
• Tight parameter distribution
• Induction heating
• Easy paralleling
• High Frequency SMPS
• RoHS Compliant
Absolute Maximum Ratings
Symbol Parameter
Rating
IC1 Continuous Collector Current TC = @ 25°C
IC1 Continuous Collector Current TC = @ 100°C
ICM Pulsed Collector Current 1
VGE Gate-Emitter Voltage
93
50
195
±30V
SSOA Switching Safe Operating Area
195
EAS Single Pulse Avalanche Energy
20
tSC Short Circut Withstand Time 3
10
IF Diode Continuous Forward Current
TC = 25°C
TC = 100°C
90
55
IFRM Diode Max. Repetitive Forward Current
195
Thermal and Mechanical Characteristics
Symbol Parameter
Min Typ Max
PD Total Power Dissipation TC = @ 25°C
415
RθJC Junction to Case Thermal Resistance
IGBT
Diode
0.30
0.67
RθCS Case to Sink Thermal Resistance, Flat Greased Surface
0.11
TJ, TSTG Operating and Storage Junction Temperature Range
-55 150
TL Soldering Temperature for 10 Seconds (1.6mm from case)
300
WT Package Weight
0.22
5.9
Torque Mounting Torque (TO-247), 6-32 M3 Screw
10
1.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Unit
A
V
mJ
μs
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Microsemi Website - http://www.microsemi.com

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