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PDF APT50GS60SRDQ2G Data sheet ( Hoja de datos )
| Número de pieza | APT50GS60SRDQ2G | |
| Descripción | High Speed NPT IGBT | |
| Fabricantes | Microsemi | |
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APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
600V, 50A, VCE(ON) = 2.8V Typical
Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode
The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient
make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise
TO-247
D3PAK
and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
Features
Typical Applications
APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
• Fast Switching with low EMI
• Very Low EOFF for Maximum Efficiency
• Short circuit rated
• Low Gate Charge
• ZVS Phase Shifted and other Full Bridge
• Half Bridge
• High Power PFC Boost
• Welding
Single die
IGBT with
separate DQ
diode die
• Tight parameter distribution
• Induction heating
• Easy paralleling
• High Frequency SMPS
• RoHS Compliant
Absolute Maximum Ratings
Symbol Parameter
Rating
IC1 Continuous Collector Current TC = @ 25°C
IC1 Continuous Collector Current TC = @ 100°C
ICM Pulsed Collector Current 1
VGE Gate-Emitter Voltage
93
50
195
±30V
SSOA Switching Safe Operating Area
195
EAS Single Pulse Avalanche Energy
20
tSC Short Circut Withstand Time 3
10
IF Diode Continuous Forward Current
TC = 25°C
TC = 100°C
90
55
IFRM Diode Max. Repetitive Forward Current
195
Thermal and Mechanical Characteristics
Symbol Parameter
Min Typ Max
PD Total Power Dissipation TC = @ 25°C
415
RθJC Junction to Case Thermal Resistance
IGBT
Diode
0.30
0.67
RθCS Case to Sink Thermal Resistance, Flat Greased Surface
0.11
TJ, TSTG Operating and Storage Junction Temperature Range
-55 150
TL Soldering Temperature for 10 Seconds (1.6mm from case)
300
WT Package Weight
0.22
5.9
Torque Mounting Torque (TO-247), 6-32 M3 Screw
10
1.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Unit
A
V
mJ
μs
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Microsemi Website - http://www.microsemi.com
1 page  
TYPICAL PERFORMANCE CURVES
200
100 ICM
200
100 ICM
APT50GS60B_SRDQ2(G)
10 VCE(on) 13μs
100μs
1ms
10ms
1 100ms
DC line
0.1 TTJC==17255°°CC
1 10 100 800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
10
VCE(on)
13μs
100μs
1ms
1 TTJC==12550°°CC
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
1
IC = IC(TC = 25°C)*(TJ - TC)/125
10 100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 18, Maximum Forward Safe Operating Area
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10-5
0.9
0.7
0.5
Note :
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak T J = P DM x Z θJC + T C
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
160
140
120
100 75°C
80
60
F
max
=
min
(fmax,
f
max2)
0.05
fmax1 = t d(on) + tr + td(off) + tf
40
TJ =
TC =
125°C
75°C
100°C
fmax2 =
Pdiss - P cond
E on2 + E off
20
D = 50 %
VCE = 400V
0 RG = 4.7Ω
Pdiss =
TJ - T C
R θJC
0 10 20 30 40 50 60 70 80 90
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT50GS60SRDQ2G.PDF ] | |
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