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Número de pieza | AON7700 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON7700 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! AON7700
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON7700 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
40A
< 7.2mΩ
< 8.6mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
18
27
36
45
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
40
28
100
16
12
17
14
26
10
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
4
Max
40
75
4.8
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: May. 2012
www.aosmd.com
Page 1 of 7
1 page AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 50
25
40
20
30
15
10 20
5 10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
0 25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
0 1000
18
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 3: May 2012
www.aosmd.com
Page 5 of 7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet AON7700.PDF ] |
Número de pieza | Descripción | Fabricantes |
AON7700 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
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