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PDF ME25N06 Data sheet ( Hoja de datos )
| Número de pieza | ME25N06 | |
| Descripción | N-Channel Enhancement MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ME25N06 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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N-Channel Enhancement MOSFET
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
ME25N06(-G)
FEATURES
● RDS(ON)≦62mΩ@VGS=10V
● RDS(ON)≦86mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
PIN CONFIGURATION
(TO-252)
Top View
e Ordering Information: ME25N06 (Pb-free)
ME25N06-G (Green product)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25℃
Current(Tj=150℃)
TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃
TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case *
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJC
* The device mounted on 1in2 FR4 board with 2 oz copper
Rating
60
±25
16
13
65
25
16
-55 to 150
Steady State
5
Unit
V
V
A
A
W
℃
℃/W
Dec,2008-Ver1.0
01
1 page  
N-Channel Enhancement MOSFET
ME25N06(-G)
TO-252 Package Outline
Dec,2008-Ver1.0
SYMBOL
A
A1
B
B1
B2
C
D
D2
D3
H
E
E2
L
L1
L2
L3
P
MILLIMETERS (mm)
MIN
2.00
MAX
2.50
0.90
1.30
0.50
0.85
0.50
0.80
0.50
1.00
0.40
0.60
5.20
5.70
6.50
7.30
2.20
3.00
9.50
10.50
6.30
6.80
4.50
5.50
1.30
1.70
0.90
1.70
0.50
1.10
0 0.30
2.00
2.80
05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ME25N06.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| ME25N06-G | N-Channel Enhancement MOSFET | Matsuki |
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