PDF SEN06464H2CG1SA-25WR Data sheet ( Hoja de datos )

Número de pieza	SEN06464H2CG1SA-25WR
Descripción	512MB DDR2 - SDRAM SO-DIMM
Fabricantes	Swissbit
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No Preview Available ! Data Sheet Rev.1.0 18.02.2014 512MB DDR2 – SDRAM SO-DIMM 200 Pin SO-DIMM SEN06464H2CG1SA-xx[E/W]R Up to PC2-6400 in FBGA Technology RoHS compliant Options:  Data Rate / Latency Marking DDR2 667 MT/s CL5 DDR2 800 MT/s CL6 -30 -25  Module Density 512MB with 4 dies and 1 rank  Standard Grade Grade E Grade W (tA) 0°C to 70°C (tC) 0°C to 85°C (tA) 0°C to 85°C (tC) 0°C to 95°C ) (tA) -40°C to 85°C (tC) -40°C to 95°C ) *) The refresh rate has to be doubled when 85°C<TC<95°C Features:  200-pin 64-bit DDR2 Small Outline, Dual-In-Line Double Data Rate Synchronous DRAM Module  Module organization: single rank 64M x 64  VDD = 1.8V ±0.1V, VDDQ 1.8V ±0.1V  1.8V I/O ( SSTL_18 compatible)  Serial Presence Detect (SPD) EEPROM  Gold-contact pad  This module is fully pin and functional compatible to the JEDEC PC2-6400 spec. and JEDEC- Standard MO-224. (see www.jedec.org)  The pcb and all components are manufactured according to the RoHS compliance specification [EU Directive 2002/95/EC Restriction of Hazardous Substances (RoHS)]  DDR2 - SDRAM component Samsung K4T1G164QG 64Mx16 DDR2 SDRAM in FBGA-84 package  Four bit prefetch architecture  DLL to align DQ and DQS transitions with CK  Eight internal device banks for concurrent operation  Programmable CAS latency (CL)  Posted CAS additive latency (AL)  WRITE latency = READ latency – 1 tCK  Programmable burst length: 4 or 8  Adjustable data-output drive strength  On-die termination (ODT) Environmental Requirements:  Operating temperature (ambient) standard Grade 0°C to 70°C E-Grade 0°C to 85°C W-Grade  Operating Humidity -40°C to 85°C 10% to 90% relative humidity, noncondensing  Operating Pressure 105 to 69 kPa (up to 10000 ft.)  Storage Temperature -55°C to 100°C  Storage Humidity 5% to 95% relative humidity, noncondensing  Storage Pressure 1682 PSI (up to 5000 ft.) at 50°C Figure: mechanical dimensions1 Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Fon: +41 (0) 71 913 03 03 Fax: +41 (0) 71 913 03 15 1if no tolerances specified ± 0.15mm www.swissbit.com eMail: [email protected] Page 1 of 16 1 page Data Sheet Rev.1.0 18.02.2014 FUNCTIONAL BLOCK DIAGRAMM 512MB DDR2 SDRAM SO-DIMM, 1 RANK AND 4 COMPONENTS CKE0 ODT0 S0 3O+5% DQS0 DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS ODT CKE D0 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS4 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS ODT CKE D2 DQS1 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS5 DQS5 DM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS2 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS3 DM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS ODT CKE D1 UDQS UDQS UDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS6 DQS6 DM6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DQS7 DM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS ODT CKE D3 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 BA0-BA2 A0-A13 RAS CAS WE 3O+5% CK0 CK0 CK1 CK1 BA0-BA2: SDRAM D0-D3 A0-A13: SDRAM D0-D3 RAS: SDRAM D0-D3 CAS: SDRAM D0-D3 WE: SDRAM D0-D3 2 loads VDDSPD VDD VSS SPD D0-D3 VREF D0-D3 D0-D3/SPD 2 loads SCL Serial PD WP SA0 SA1 SA2 SA0 SA1 SDA Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Fon: +41 (0) 71 913 03 03 Fax: +41 (0) 71 913 03 15 www.swissbit.com eMail: [email protected] Page 5 of 16 5 Page Data Sheet Rev.1.0 18.02.2014 DDR2 SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Continued) (0°C ≤ TCASE ≤ + 85°C; VDDQ = +1.8V ± 0.1V, VDD = +1.8V ± 0.1V) AC CHARACTERISTICS PARAMETER ODT power-down exit latency ODT enable from MRS command Exit active power-down to READ command, MR [bit 12 = 0] Exit active power-down to READ command, MR [bit 12 = 1] Exit precharge power-down to any non-READ command CKE minimum high/low time SYMBOL tAXPD tMOD tXARD tXARDS tXP tCKE 5300-CL5 MIN MAX 8- 0 12 2 7 – AL - - 2- 3- 6400-CL6 MIN MAX 8- 0 12 2 8 – AL - - 2- 3- Unit tCK ns tCK tCK tCK tCK Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Fon: +41 (0) 71 913 03 03 Fax: +41 (0) 71 913 03 15 www.swissbit.com eMail: [email protected] Page 11 of 16 11 Page

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