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Numéro de référence | 4N60I | ||
Description | Surface Mount N-Channel Power MOSFET | ||
Fabricant | WEITRON | ||
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1 Page
4N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free
Description:
The WEITRON 4N60 is a high voltage MOSFET and is designed
to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used
at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
Features:
2 DRAIN
*
*
RDS(ON) =2.5 Ohms @VGS
Ultra low gate charge
=10V
* Low reverse transfer Capacitance
1 GATE
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
3
SOURCE
DRAIN CURRENT
4 AMPERES
DRAIN SOURCE VOLTAGE
600 VOLTAGE
D-PAK3/(TO-251)
D-PAK/(TO-252)
TO-220 TO-220F
Maximum Ratings(T A=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS
600
V
VGSS ±30
Avalanche Current - (Note 1)
Continuous Drain Current @ TC=25˚C
@ TC=100˚C
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)
IAR 4.4
ID
4.0
2.8
A
IDM 16
Avalanche Energy, Single Pulsed (Note 2)
Avalanche Energy, Repetitive, Limited by TJMAX
EAS 276 mJ
EAR 10.6 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
Total Power Dissipation
4N60P(T C=25˚C)
4N60F(T C=25˚C)
4N60I/D(TC=25˚C)
4N60P( Derate above25˚C)
4N60F( Derate above25˚C)
4N60I/D( Derate above25˚C)
100
33
77
PD 0.8 W
0.26
0.69
Operating Junction and Storage Temperature Range
TJ,Tstg
-55~+150
˚C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
WEITRON
http:www.weitron.com.tw
1/9
13-Apr-2011
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Pages | Pages 9 | ||
Télécharger | [ 4N60I ] |
No | Description détaillée | Fabricant |
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