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SHILING POWER ELECTRON - Thyristor Modules

Numéro de référence MTC110
Description Thyristor Modules
Fabricant SHILING POWER ELECTRON 
Logo SHILING POWER ELECTRON 





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MTC110 fiche technique
世菱
浙江世菱电力电子有限公司
MTC110/12A
ZHEJIANG SHILING POWER ELECTRON CO.,LTD.
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VALUE
TjC)
UNIT
Min Type Max
IT(AV)
IT(RMS)
VDRM
VRRM
IDRM
IRRM
ITSM
I2t
VTO
rT
VTM
dv/dt
di/dt
IGT
VGT
Mean on-state current
180° half sinewave 50Hz
Single side cooled,Tc=85°C
RMS on-state current
Single side cooled,Tc=85°C
Repetitive
Repetitive
peak
peak
off-state
reverse
voltage
voltage
VDRM&V RRM tp=10ms
VDsM&V RsM= VDRM&V RRM+200V
respectively
Repetitive peak current
Surge on-state current
I2T for fusing coordination
at VDRM
at VRRM
10ms half sinewave
VR=60%V RRM
Threshold voltage
On-state slop resistance
Peak on-state voltage
ITM=330A
Critical rate
voltage
of
rise
of
off-state
VDM=67%V DRM
Critical
current
rate
of
rise
of
on-state
From 67%V DRM
to 330A,Gate source
tr 0.5μs Repetitive
1.5A
Gate trigger current
Gate trigger voltage
VA=12 V,I A=1A
125 110 A
125 173 A
125 1200
V
125
125
125
125
125
125
30
25 0.8
12 mA
2.40 KA
29.3 A2s*103
0.8 V
2.29 mΩ
1.70
V
500 Vs
100 As
100
1.8
mA
V
IH Holding current
VGD
Rth(j-c)
Viso
Fm
Non-trigger gate voltage
Thermal resistance
Junction to heatsink
Isolation voltage
Thermal connection torqueM( 5)
Mounting torque(M6)
At 67%V DRM
At 1800 sine,Single side cooled
50Hz,R.M.S,t=1min,isIo:1mA(MAX)
Tstg Stored temperature
Wt Weight
Outline
20
125
2500
-40
2.0
3.0
154
100 mA
0.2 V
0.250 °C /W
V
N.m
N.m
140 °C
g
OUTLINE DRAWING & CIRCUIT DAI GRAM
MTC:

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