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PDF MFC110 Data sheet ( Hoja de datos )

Número de pieza MFC110
Descripción Thyristor/Diode Modules
Fabricantes TECHSEM 
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No Preview Available ! MFC110 Hoja de datos, Descripción, Manual

MFC110
Thyristor/Diode Modules
Features
! Isolated mounting base 2500V~
! Pressure contact technology with
increased power cycling capability
! Space and weight savings
Typical Applications
! AC/DC Motor drives
! Various rectifiers
! DC supply for PWM inverter
VDSMVRSM
VDRM,VRRM
Type & Outline
1300 V
1500 V
1700 V
1900 V
1200 V
1400 V
1600 V
1800 V
MFC110-12-223F3TD
MFC110-14-223F3TD
MFC110-16-223F3TD
MFC110-18-223F3TD
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
IT(AV)
IT(RMS)
IDRM
IRRM
ITSM
I2t
VTO
rT
VTM
tgr
dv/dt
di/dt
IGT
VGT
IH
IL
VGD
IGD
Rth(j-c)
Rth(c-h)
Viso
Fm
Tvj
Tstg
Wt
Outline
Mean on-state current
RMS on-state current
Repetitive peak current
Surge on-state current
I2T for fusing coordination
Threshold voltage
180° half sine wave 50Hz
Single side cooled,Tc=85°C
at VDRM
at VRRM
10ms half sine wave
VR=60%VRRM
On-state slop resistance
Peak on-state voltage
Gate control delay time
ITM=330A
VD=0.67VDRM
Critical rate of rise of off-state voltage VDM=67%VDRM
Critical rate of rise of on-state current
Gate trigger current
Gate source 1.5A
tr 0.5µs Repetitive
Gate trigger voltage
Holding current
VA=12V, IA=1A
Latching current
Non-trigger gate voltage
Non-trigger gate current
Thermal resistance
Junction to case
Thermal resistance
case to heatsink
Isolation voltage
Thermal connection torque(M5)
Mounting torque(M6)
junction temperature
Stored temperature
Weight
VA=12V,Gate source 1.5A tr 0.5µs,50HZ
VDM=VDRM
Single side cooled
Single side cooled
50Hz,R.M.S,t=1min,Iiso:1mA(MAX)
223F3
Tj(°C)
Min
125
125
125
125
125
25
25
125
125
30
25 0.7
10
25
125
2500
-40
-40
VALUE
Type
Max
UNIT
110 A
173 A
12 mA
2.80
39
0.8
2.29
KA
A2s*103
V
mΩ
1.83
V
2 µs
800 V/µs
100 A/µs
100 mA
2.5 V
120 mA
300 600 mA
0.25
V
6 mA
0.250 °C /W
0.15
°C /W
V
4.0 N·m
6.0 N·m
125 °C
125
172
°C
g
http://www.tech-sem.com
Page 1 of 3
2013-07

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