|
|
Numéro de référence | AL081C200W | ||
Description | High Power Linear Infrared Laser Diode Array | ||
Fabricant | Roithner | ||
Logo | |||
AL081C200W
TECHNICAL DATA
High Power Linear Infrared Laser Diode Array
Features
• Output Power: 200 W
• 780-830 nm Emission Wavelength
• Spectral Width: ≤4 nm
• High Reliability, High Efficiency
Applications
• Laser Pumping
• Medical Usage
• High power laser diode applications
Specifications (25°C)
Item
Optical Specifications
CW Output Power
Output Power / Bar
Array Length
Center Wavelength
Wavelength Tolerance
Spectral Width
Number of Bars
Wavelength Temperature Coefficient
Beam Divergence
Electrical Specifications
Slope Efficiency
Conversion Efficiency
Threshold Current
Operating Current
Operating Voltage
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
PO
PS
L
λC
Δλ
θ┴×θ║
ES
NS
ITH
IF
UF
UR
TOP
TSTG
Value
200
40
57
780-830
±5
≤4
5
0.3
40x8
≥1
≥ 40%
≤ 12
≤ 52
≤ 10
2.5
+10 … +40
-40 ... +85
Unit
W
W
mm
nm
nm
nm
nm/°C
deg
W/A
A
A
V
V
°C
°C
20.09.2010
AL081C200W
1 of 3
|
|||
Pages | Pages 3 | ||
Télécharger | [ AL081C200W ] |
No | Description détaillée | Fabricant |
AL081C200W | High Power Linear Infrared Laser Diode Array | Roithner |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |