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Roithner - High Power Stacked Infrared Laser Diode Array

Numéro de référence AS081C320W
Description High Power Stacked Infrared Laser Diode Array
Fabricant Roithner 
Logo Roithner 





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AS081C320W fiche technique
AS081C320W
TECHNICAL DATA
High Power Stacked Infrared Laser Diode Array
Features
Applications
Output Power: 320 W
Laser Pumping
780-830 nm Emission Wavelength
Medical Usage
Spectral Width: 4 nm
High power laser diode applications
High Reliability, High Efficiency
CW stack arrays adopt micro-channel package
Specifications (25°C)
Item
Optical Specifications
CW Output Power
Output Power / Bar
Array Length
Center Wavelength
Wavelength Tolerance
Spectral Width
Package Style
Bar Length
Number of Bars
Wavelength Temperature Coefficient
Beam Divergence
Electrical Specifications
Slope Efficiency
Conversion Efficiency
Threshold Current
Operating Current
Operating Voltage
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
PO
PS
L
λC
Δλ
θ×θ
ES
NS
ITH
IF
UF
UR
TOP
TSTG
Value
320
40
10
780-830
±5
4
Micro Channel
2.4
8
0.3
40x8
1
40%
12
52
16
2.5
+10 … +40
-40 ... +85
Unit
W
W
mm
nm
nm
nm
mm
nm/°C
deg
W/A
A
A
V
V
°C
°C
20.09.2010
AS081C320W
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