(PDF) AS081Q300W Datasheet - High Power Stacked Infrared Laser Diode Array

Número de pieza	AS081Q300W
Descripción	High Power Stacked Infrared Laser Diode Array
Fabricantes	Roithner
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No Preview Available ! AS081Q300W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • Output Power: 300 W qCW • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency • QCW stack can be designed according to the customer of non-standard products heat sink package Applications • Laser Pumping • Medical Usage • High power laser diode applications Specifications (25°C) Item Optical Specifications qCW Output Power qCW Output Power / Bar Array Length Center Wavelength Wavelength Tolerance Spectral Width Package Style Bar Length Number of Bars Wavelength Temperature Coefficient Beam Divergence Electrical Specifications Slope Efficiency Conversion Efficiency Threshold Current Operating Current Operating Voltage Absolute Maximum Ratings Reverse Voltage Operating Temperature Storage Temperature Symbol PO PS L λC Δλ θ┴×θ║ ES NS ITH IF UF UR TOP TSTG Value 300 60 10 780-830 ±5 ≤4 Micro Channel 0.5 5 0.3 40x8 ≥1 ≥ 40% ≤ 25 ≤ 90 ≤ 10 2.5 +10 … +40 -40 ... +85 Unit W W mm nm nm nm mm nm/°C deg W/A A A V V °C °C 20.09.2010 AS081Q300W 1 of 2 1 page

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PDF AS081Q300W Data sheet ( Hoja de datos )