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Número de pieza | DSEI12-06A | |
Descripción | Fast Recovery Epitaxial Diode | |
Fabricantes | IXYS Corporation | |
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Epitaxial Diode (FRED)
VRSM
V
640
VRRM
V
600
Type
DSEI 12-06A
A
DSEI 12-06A
IFAV = 14 A
VRRM = 600 V
trr = 35 ns
C TO-220 AC
C
A
A = Anode, C = Cathode
C
Symbol
IFRMS
IFAVM
IFRM
IFSM
I2t
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
TVJ = TVJM
TC = 100°C; rectangular, d = 0.5
tp < 10 µs; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C
mounting torque
typical
Maximum Ratings
25 A
14 A
150 A
100 A
110
85 A
95
50 A2s
50
36 A2s
37
-40...+150
150
-40...+150
°C
°C
°C
62 W
0.4...0.6 Nm
2g
Symbol Conditions
Characteristic Values
typ. max.
IR
VR = VRRM
TVJ = 25°C
VR = 0.8·VRRM TVJ = 25°C
VR = 0.8·VRRM TVJ = 125°C
50 µA
25 µA
3 mA
VF
IF = 16 A
TVJ = 150°C
TVJ = 25°C
1.5 V
1.7 V
VT0 For power-loss calculations only
rT TVJ = TVJM
1.12 V
23.2 mW
RthJC
RthCH
RthJA
2 K/W
0.5 K/W
60 K/W
trr
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C
35 50 ns
IRM VR = 350 V; IF = 12 A; -diF/dt = 100 A/µs
L < 0.05 µH; TVJ = 100°C
4 4.4
A
IFAVM rating includes reverse blocking losses at TVJM. VR = 0.8·VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Features
• International standard package
JEDEC TO-220 AC
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
-3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet DSEI12-06A.PDF ] |
Número de pieza | Descripción | Fabricantes |
DSEI12-06A | Fast Recovery Epitaxial Diode | IXYS Corporation |
DSEI12-06AS | Fast Recovery Epitaxial Diode | IXYS |
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