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Número de pieza | TPD1045F | |
Descripción | Silicon Monolithic Power MOS Integrated Circuit | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TPD1045F (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! TPD1045F
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1045F
Low-Side Power Switch for Motor, Solenoid and Lamp Drive
The TPD1045F is a low-side power switch.
The IC has a vertical MOSFET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC
is equipped with intelligent self-protection functions.
Features
• A monolithic power IC with a new structure combining a
control block and a vertical power MOSFET (L2-π-MOSⅤ) on
single chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp),
Over temperature (thermal shutdown), and overcurrent
(switching mode).
• Low Drain-Source ON-resistance: RDS (ON) = 100 mΩ (max)
(@VIN = 5 V, ID = 2 A, Tch = 25°C)
• 8-pin SOP package with embossed-tape packing.
SOP8-P-1.27A
Weight: 0.08 g (typ.)
Pin Assignment (top view)
SOURCE 1
SOURCE 2
SOURCE 3
IN 4
(TOP VIEW)
8 DRAIN
7 DRAIN
6 DRAIN
5 DRAIN
Marking
TPD1045
F
Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Due to its MOS structure, this product is sensitive to static electricity.
1
2006-10-31
1 page VV((CCLL))DDSSSS-–TcThch
80
70
60
50
40
30
20
VIN=0V
10 ID=10mA
0
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
Cチhaャnnネeルl te温m度perTacthur(e℃)Tch (°C)
IIIH((11)-–TcThch
1000
900 VIN=5V
State:Normal
800
700
600
500
400
300
200
100
0
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
チCャhaネnnルel温te度mpTecraht(u℃re) Tch (°C)
TPD1045F
VVthth–-TTcchh
5
VDS=12V
5
ID=10mA
4
4
3
3
2
2
1
1
0
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
Chチanャneネl teルm温pe度ratTucrhe (℃T)ch (°C)
IIIHH((11))–-VVIINN
1000
900 Tch=25°C
State:Normal
800
700
600
500
400
300
200
100
0
012345678
In入pu力t v電ol圧tagVeIN V(VIN) (V)
IIIIHH((22))-–TcThch
1000
900 VIN=5V
800 State:Overcurrent
700
600
500
400
300
200
100
0
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
Cチhaャnnネelルte温mp度eraTtcuhre(℃T) ch (°C)
IIH(22))-–VVININ
1600
1400
1200
Tch=25°C
State:Overcurrent
1000
800
600
400
200
0
012345678
In入pu力t v電ol圧tagVeIN V(VIN) (V)
5 2006-10-31
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TPD1045F.PDF ] |
Número de pieza | Descripción | Fabricantes |
TPD1045F | Silicon Monolithic Power MOS Integrated Circuit | Toshiba Semiconductor |
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