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2SC5006-A fiches techniques PDF

CEL - NPN Silicon Transistor

Numéro de référence 2SC5006-A
Description NPN Silicon Transistor
Fabricant CEL 
Logo CEL 





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2SC5006-A fiche technique
SILICON TRANSISTOR
NE85619
/
2SC5006 JEITA
Part No.
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers
fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is a proprietary fabrication technique.
FEATURES
Low Voltage Use.
High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
NUMBER
NE85619-A
2SC5006-A
NE85619-T1-A
2SC5006-T1-A
QUANTITY
50 pcs./Unit
3 kpcs./Reel
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape. (Pb-Free)
To order evaluation samples, please contact your nearby sales office.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage
VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT 125
Junction Temperature
Tj 150
Storage Temperature
Tstg –60 to +150
V
V
V
mA
mW
˚C
˚C
PACKAGE DIMENSIONS
in millimeters
1.6 ± 0.1
0.8 ± 0.1
2
3
1
1. Emitter
2. Base
3. Collector
Document No. P10385EJ2V0DS00 (2nd edition)
(Previous No. TD-2399)
Date Published July 1995 P

PagesPages 9
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