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PDF D1304 Data sheet ( Hoja de datos )
| Número de pieza | D1304 | |
| Descripción | NPN Transistor - 2SD1304 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D1304 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SD1304
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q Zener diode built in.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
20±3
20±3
7
200
100
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 2A
Internal Connection
C
B
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
fT
Conditions
VCB = 10V, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
min
17
7
160
90
E
typ max Unit
0.1 µA
23 V
V
460
0.5 V
150 MHz
*hFE1 Rank classification
Rank
Q
hFE1
Marking Symbol
160 ~ 260
2AQ
R
210 ~ 340
2AR
S
290 ~ 460
2AS
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D1304.PDF ] | |
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