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PDF K3687-01MR Data sheet ( Hoja de datos )
| Número de pieza | K3687-01MR | |
| Descripción | MOSFET ( Transistor ) - 2SK3687-01MR | |
| Fabricantes | Fuji Electric | |
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2SK3687-01MR
www.DataSheet4U.com
FUJI POWER MOSFET
Super FAP-G Series
200311
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Symbol
VDS
VDSX
ID
ID(puls]
VGS
IAS
Ratings
600
600
±16
±64
±30
16
EAS 242.7
dVDS/dt
dV/dt
PD
Tch
Tstg
VISO
20
5
2.16
97
+150
-55 to +150
2
Unit
V
V
A
A
V
A
Remarks
VGS=-30V
Tch<=150°C
mJ L=1.74mH
kV/s
kV/µs
W
VCC=60V *1
VDS<=600V
*2
Ta=25°C
Tc=25°C
°C
°C
kVrms t=60sec, f=60Hz
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 See to Avalanche Energy Graph
*2 IF<= -ID, -di/dt=50A/µs, VCC<= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
Tch=25°C
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=8A VGS=10V
Tch=125°C
ID=8A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=8A
VGS=10V
RGS=10 Ω
VCC=300V
ID=16A
VGS=10V
L=1.74mH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
600
3.0
6.5
16
10
0.42
13
1590
200
8
29
16
58
8
34
12
10
1.00
0.68
7.8
5.0
25
250
100
0.57
2390
300
12
43.5
24
87
12
51
18
15
1.50
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.289 °C/W
58.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3687-01MR.PDF ] | |
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