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PDF LUF12N65 Data sheet ( Hoja de datos )
| Número de pieza | LUF12N65 | |
| Descripción | 650V N-Channel Enhancement Mode MOSFET | |
| Fabricantes | LUL | |
| Logotipo |  |
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LUP12N65 / LUF12N65
650V N-Channel Enhancement Mode MOSFET
Product General Description
These enhancement mode power filed effect
transistors havebeen advanced technology
design to provide low on-state resistance,
high avalanche energy. These devices are well
suited for popular AC-DC applications, active
power factor correction, ballasts based on
half-bridge topology.
Features
12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A
• Low On-state Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
Marking and Order Information
TYPE
LUP12N65
LUF12N65
MARKING
P12N65
F12N65
PACKAGE
TO-220
TO-220F
PACKING
50PCS/TUBE
50PCS/TUBE
Absolute Maximum Ratings and Thermal Characteristics (TC=25OC unless otherwise noted )
Parameter
Symbol ULP12N65 ULF12N65 Units
Drain-Source Voltage
VDS 650 V
Gate-Source Voltage
VGS +30 V
Continuous Drain Current
ID 12 12 A
Pulsed Drain Current 1)
Avalanche Energy with Single Pulse
IAS=12A, VDD=90V, L=12mΗ
Maximum Power Dissipation
Derating Factor
Operating Junction and Storage
Te mp e ra ture Ra ng e
Tc= 2 5 OC
IDM
E AS
PD
TJ,TSTG
48 48
990
175 52
1.4 0.42
-55 to +150
A
mJ
W
OC
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
RθJC
0.7
RθJA 62.5
2.4 OC/W
100 OC/W
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.A July 2010
Page.1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LUF12N65.PDF ] | |
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