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Hamamatsu Corporation - InGaAs PIN photodiode

Numéro de référence G6742
Description InGaAs PIN photodiode
Fabricant Hamamatsu Corporation 
Logo Hamamatsu Corporation 





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G6742 fiche technique
PHOTODIODE
InGaAs PIN photodiode
G6742 series
Surface-mount type
Features
l Small chip carrier package
l High reliability
l Low price
Applications
l Laser diode monitors
s General ratings
Parameter
Package
Active area
G6742-003
φ0.3
Ceramic base
s Absolute maximum ratings
Parameter
Symbol
Reverse voltage
VR Max.
Operating
temperature
Topr
Storage temperature Tstg
* No condensation
G6742-003
20
-40 to +85 *
-55 to +125 *
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal
capacitance
Shunt resistance
Detectivity
Noise equivalent
power
Symbol
Condition
λ
λp
S
ID
fc
Ct
Rsh
D
NEP
λ=1.3 µm
λ=1.55 µm
VR=5 V
VR=5 V, RL=50
-3 dB
f=1 MHz
VR=5 V
VR=10 mV
λ=λp
λ=λp
Min.
-
-
0.8
0.85
-
-
-
-
-
-
G6742-003
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.3
300
10
1000
5 × 1012
4 × 10-15
Max.
-
-
-
-
1.5
-
-
-
-
-
G6742-01
φ1.0
G6742-01
10
Unit
-
mm
Unit
V
°C
°C
G6742-01
Min. Typ. Max.
- 0.9 to 1.7 -
Unit
µm
- 1.55
0.8 0.9
0.85 0.95
-1
- 35
-
-
-
5
-
µm
A/W
nA
MHz
- 90 -
pF
- 100 -
M
- 5 × 1012 - cm · Hz1/2/W
- 2 × 10-14 -
W/Hz1/2

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