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PDF LM9013G Data sheet ( Hoja de datos )

Número de pieza LM9013G
Descripción Amplifier Transistors
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! LM9013G Hoja de datos, Descripción, Manual

LM9013G, LM9013H
Preferred Devices
Amplifier Transistors
NPN Silicon
Moisture Sensitivity Level: 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
25
25
3.0
1000
Vdc
Vdc
Vdc
mAdc
625 mW
5.0 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
1.5
12
–55 to
+150
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, (Note 1.)
Junction to Ambient
RθJA
200 °C/W
Thermal Resistance,
Junction to Case
RθJC
83.3 °C/W
1. RqJA is measured with the device soldered into a typical printed circuit board.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
1
23
TO–92
CASE 29
STYLE 1
LM90
13x
YWW
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 0
LM9013x = Specific Device Code
x = G or H
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
LM9013G
TO–92
5000 Units/Box
LM9013H
TO–92
5000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
LM9013G/D

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