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PDF K3442 Data sheet ( Hoja de datos )
| Número de pieza | K3442 | |
| Descripción | MOSFET ( Transistor ) - 2SK3442 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3442 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and
Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 28 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 100 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
www.DataSheet4U.coCmharacteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±30
45
180
125
468
45
12.5
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Rth (ch-c)
Notice:
Max
Unit
Please use the S1 pin for gate input
signal return. Make sure that the
1.00 °C/W main current flows into the S2 pin.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2 VDD = 25 V, Tch = 25°C (initial), L = 373 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
4
2
3
1 2006-11-20
1 page  
2SK3442
10
3
1
Duty = 0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
Single pulse
0.01
10 μ
100 μ
www.DataSheet4U.com
rth – tw
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
1m
10 m
100 m
1
Pulse width tw (s)
10
Safe operating area
1000
300
ID max (pulsed) *
100
100 μs *
1 ms *
ID max (continuous)
30
10 DC operation
3
1
* Single nonrepetitive pulse
Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.1
13
10
30
VDSS max
100 300
Drain-source voltage VDS (V)
1000
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150 175
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 373 μH
Wave form
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-20
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3442.PDF ] | |
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