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PDF RFUS10TF4S Data sheet ( Hoja de datos )

Número de pieza RFUS10TF4S
Descripción Super Fast Recovery Diode
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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Super Fast Recovery Diode
RFUS10TF4S
lSeries
Standard Fast Recovery
lDimensions (Unit : mm)
lApplications
General rectification
lFeatures
1)Single type.(TO-220)
2)High switching speed
RFUS10
TF4S
①②
Data Sheet
lStructure
lConstruction
Silicon epitaxial planer
ROHM : TO220NFM
Manufacture Year
Manufacture Week
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty0.5
60Hz half sin wave, Resistance load, Tc=82°C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
430
430
10
80
150
-55 to +150
Unit
V
V
A
A
C
C
lElectrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal resistance
Rth(j-c)
Conditions
IF=10A
VR=430V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min.
Typ. Max.
1.45 1.7
0.05 10
19 30
3
Unit
V
μA
ns
°C/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A

1 page




RFUS10TF4S pdf
Notes
Notice
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A

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