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Número de pieza | PFW20N50 | |
Descripción | 500V N-Channel MOSFET | |
Fabricantes | Power Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PFW20N50 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Aug 2006
FEATURES
Originative New Design
100% EAS Test
Rugged Gate Oxide Technology
Extremely Low Intrinsic Capacitances
Remarkable Switching Characteristics
Unequalled Gate Charge : 90 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.20 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching
Suitable for power supplies, adaptors and PFC
SMPS (Switched Mode Power Supplies)
PFW20N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) = 0.25 Ω
ID = 20 A
TO-247
Drain {
Gate
{
●
◀▲
●
●
Source
{
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
20
13
80
±30
1000
20
25
4.0
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
250
2.0
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.5
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
Aug 2006
Power Device REV.A0
1 page Characteristics Test Circuit & Waveform
10V
VDS
RG
RL
VDD
( 0.5 rated VDS )
VDS
90%
DUT
Vin 10%
td(on)
tr
t on
Fig 14. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Fig 15. Gate Charge Test Circuit & Waveform
10V
VDS
ID
RG
L
VDD
DUT
EAS = --21--
LL IAS2
------B--V--D--S-S-------
BVDSS -- VDD
BVDSS
IAS
ID (t)
VDD
VDS (t)
t p Time
Fig 16. Unclamped Inductive Switching Test Circuit & Waveforms
Aug 2006
Power Device REV.A0
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PFW20N50.PDF ] |
Número de pieza | Descripción | Fabricantes |
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