PDF MRF9030LR1 Data sheet ( Hoja de datos )

Número de pieza	MRF9030LR1
Descripción	RF Power Field Effect Transistor
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.5 dBc • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9030 Rev. 8, 9/2008 MRF9030LR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 360B - 05, STYLE 1 NI - 360 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Symbol VDSS VGS PD Tstg TC TJ Symbol RθJC Value - 0.5, +68 - 0.5, + 15 92 0.53 - 65 to +150 150 200 Value 1.9 Class 1 (Minimum) M1 (Minimum) Unit Vdc Vdc W W/°C °C °C °C Unit °C/W © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF9030LR1 1 1 page TYPICAL CHARACTERISTICS 20 Gps 19 η 18 17 16 IMD 15 14 IRL VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two−Tone, 100 kHz Tone Spacing 50 45 40 35 −30 −32 −34 13 −36 12 −38 930 935 940 945 950 955 960 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance −10 −12 −14 −16 −18 20 IDQ = 375 mA 19.5 19 300 mA 18.5 250 mA 200 mA 18 17.5 17 1 VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power −20 VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz −30 IDQ = 200 mA −40 300 mA 250 mA −50 375 mA −60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power 0 VDD = 26 Vdc −10 IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz −20 −30 −40 3rd Order −50 5th Order −60 7th Order −70 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power 22 VDD = 26 Vdc 20 IDQ = 250 mA f = 945 MHz 18 Gps 60 50 40 16 30 14 η 20 12 10 10 0 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain and Efficiency versus Output Power RF Device Data Freescale Semiconductor MRF9030LR1 5 5 Page

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