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PDF MRF19085LSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF19085LSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance
IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT.,rfa1ff=ic
1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5
Codes 8 Through 13)
MHz
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Document Number: MRF19085
Rev. 8, 5/2006
MRF19085LR3
MRF19085LSR3
1930 - 1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF19085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF19085LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
PD
Tstg
TC
TJ
- 0.5, +65
- 0.5, +15
273
1.56
- 65 to +150
150
200
Characteristic
Symbol
Value (1)
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
RθJC
0.79
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
1
1 page  
C2
R1
B1
R2 C5 C4 C3
C1
C8
C7
L1
C9
R3
C10
C11 C12
C6
MRF19085
Rev.4
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition
period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
H
E
A
G
1
2
D
bbb M T A M
A
(FLANGE)
2X Q
NOTES:
bbb M T A M B M
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M − 1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
3 FROM PACKAGE BODY.
K
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
BM
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
M (INSULATOR)
R (LID)
F 0.003 0.006 0.08 0.15
G 1.100 BSC
27.94 BSC
bbb M T A M B M
ccc M T A M B M
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
N (LID)
S (INSULATOR)
M 0.774 0.786 19.66 19.96
N 0.772 0.788 19.60 20.00
ccc M T A M B M
aaa M T A M B M
Q .118 .138 3.00 3.51
R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
aaa 0.005 REF
0.127 REF
C
bbb 0.010 REF
ccc 0.015 REF
0.254 REF
0.381 REF
F STYLE 1:
T
SEATING
PLANE
CASE 465 - 06
ISSUE G
PIN 1. DRAIN
2. GATE
3. SOURCE
NI - 780
MRF19085LR3
4X U
(FLANGE)
B
4X Z
(LID)
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M − 1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
B
(FLANGE)
2
D
bbb M T A M
2X K
BM
H
E
A
N (LID)
ccc M T A M B M
M (INSULATOR)
bbb M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
A
(FLANGE)
C
3
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF19085LSR3
F
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U − − − 0.040
Z − − − 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
− − − 1.02
− − − 0.76
0.127 REF
0.254 REF
0.381 REF
RF Device Data
Freescale Semiconductor
MRF19085LR3 MRF19085LSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF19085LSR3.PDF ] | |
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