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SemiHow - 800V N-Channel MOSFET

Numéro de référence HFP3N80
Description 800V N-Channel MOSFET
Fabricant SemiHow 
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HFP3N80 fiche technique
Dec 2005
HFP3N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 4.0 Ω
ID = 3.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 17 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
3.0
1.9
12
±30
320
3.0
10.7
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
107
0.85
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.17
--
62.5
Units
℃/W
SEMIHOW REV.A0,Dec 2005

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