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PDF CD965 Data sheet ( Hoja de datos )
| Número de pieza | CD965 | |
| Descripción | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
| Fabricantes | Compensated Deuices Incorporated | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CD965 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CD965
TO-92
Plastic Package
ECB
For Low Frequency Power Amplification
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Collector Current Peak
Power Dissipation @ Ta=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
ICP
PC
Tj
Tstg
VALUE
20
40
7
5
8
0.75
150
- 55 to +150
UNITS
V
V
V
A
A
W
ºC
ºC
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=100µA, IE=0
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut Off Current
ICBO
VCB=10V, IE=0
Emitter Cut Off Current
IEBO
VEB=7V, IC=0
DC Current Gain
hFE *IC=500mA, VCE=2V
IC=2A, VCE=2V
Collector Emitter Saturation Voltage VCE (sat)
IC=3A, IB=100mA
Base Emitter Saturation Voltage
VBE (sat)
IC=1A, IB=25mA
MIN TYP
20
40
7
180
150
MAX
100
100
600
1.35
1.20
UNITS
V
V
V
nA
nA
V
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Output Capacitance
Transition Frequency
*hFE Classification
SYMBOL TEST CONDITION
MIN TYP
Cob IE=0, VCB=20V, f=1MHz
fT IC=50mA, VCE=6V
150
MAX
50
P : 180 - 270 Q : 230 - 380 R : 340 - 600
UNITS
pF
MHz
CD965Rev_3 080903E
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CD965.PDF ] | |
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