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PDF FDBL0630N150 Data sheet ( Hoja de datos )
| Número de pieza | FDBL0630N150 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDBL0630N150
N-Channel Power Trench® MOSFET
150V, 169A, 6.3mΩ
November 2014
Features
Typ rDS(on) = 5mΩ at VGS = 10V, ID = 80A
Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A
UIS Capability
RoHS Compliant
Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch
D
G
S
For current package drawing, please refer to the Fairchild
website at https://www.fairchildsemi.com/evaluate/package‐
specifications/packageDetails.html?id=PN_PSOFA‐008
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
150
±20
169
See Figure4
502
500
3.3
-55 to + 175
0.3
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDBL0630N150
Device
FDBL0630N150
Package
MO-299A
Reel Size
-
Tape Width
-
Quantity
-
Notes:
1: Current is limited by junction temperature.
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©2014 Fairchild Semiconductor Corporation
FDBL0630N150 Rev.C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics
50
ID = 80A
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30
20 TJ = 175oC
10
0 TJ = 25oC
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
10
3.0
PULSE DURATION = 80μs
2.5 DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
ID = 80A
0.5 VGS = 10V
0.0
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.5
VGS = VDS
ID = 250μA
1.2
0.9
0.6
0.3
0.0
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
1.10
ID = 1mA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
100
Ciss
Coss
10
f = 1MHz
Crss
VGS = 0V
1
0.1 1 10 100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 80A
8 VDD = 75V VDD =60V
VDD = 90V
6
4
2
0
0 20 40 60 80
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDBL0630N150 Rev.C2
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDBL0630N150.PDF ] | |
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