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2SC3199 fiches techniques PDF

SeCoS - NPN Plastic-Encapsulated Transistor

Numéro de référence 2SC3199
Description NPN Plastic-Encapsulated Transistor
Fabricant SeCoS 
Logo SeCoS 





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2SC3199 fiche technique
Elektronische Bauelemente
2SC3199
0.15 A , 50 V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
High Current Capability
High DC Current Gain
Small Package
APPLICATIONS
Audio Amplifier Applications
AM Amplifier Applications
GH
J
AD
B
K
CLASSIFICATION OF hFE
Product-Rank 2SC3199-O 2SC3199-Y
Range
70~140
120~240
2SC3199-GR 2SC3199-BL
200~400
300~700
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
50
50
5
150
400
312
150, -55~150

Base

Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Cob
fT
50
50
5
-
-
70
-
-
80
- - V IC=0.1mA, IE=0
- - V IC=1mA, IB=0
- - V IE=0.1mA, IC=0
- 0.1 μA VCB=50V, IE=0
- 0.1 μA VEB=5V, IC=0
- 700
VCE=6V, IC=2mA
- 0.25 V IC=100mA, IB=10mA
- 3.5 pF VCB=10V, IE=0, f=1MHz
- - MHz VCE=10V, IC=1mA
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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