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FTP08N06A fiches techniques PDF

IPS - N-Channel MOSFET

Numéro de référence FTP08N06A
Description N-Channel MOSFET
Fabricant IPS 
Logo IPS 





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FTP08N06A fiche technique
FTP08N06A
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
• Uninterruptible Power Supply (UPS)
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP08N06A
PACKAGE
TO-220
BRAND
FTP08N06A
Pb Lead Free Package and Finish
VDSS
55V
RDS(ON) (Max.)
8 mΩ
ID
120A
D
G
DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=0.27 mH, ID=75 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTP08N06A
55
120*
Figure 3
Figure 6
230
1.54
± 20
760
Figure 8
5.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating, 75 Amps.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
©2009 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 0.65
-- -- 62
Page 1 of 11
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175oC.
1 cubic foot chamber, free air.
FTP08N06A REV. A Nov. 2009

PagesPages 11
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